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BJT behaviour at ridiculously low current levels

Started by Piotr Wyderski May 11, 2022
jlarkin@highlandsniptechnology.com wrote:
> On Thu, 12 May 2022 16:41:47 -0400, Phil Hobbs > <pcdhSpamMeSenseless@electrooptical.net> wrote: > >> John Larkin wrote: >>> On Thu, 12 May 2022 15:01:06 -0400, Phil Hobbs >>> <pcdhSpamMeSenseless@electrooptical.net> wrote: >>> >>>> John Larkin wrote: >>>>> On Thu, 12 May 2022 10:43:14 -0400, Phil Hobbs >>>>> <pcdhSpamMeSenseless@electrooptical.net> wrote: >>>>> >>>>>> Arie de Muijnck wrote: >>>>>>> On 2022-05-12 00:30, John Larkin wrote: >>>>>>> >>>>>>>> I conjecture (ie guess) that base current makes collector current down >>>>>>>> at the single-electron level. 1 pA is just 6 milion electrons per >>>>>>>> second. >>>>>>> >>>>>>> AFAIK, it's not the base current but base voltage that controls the >>>>>>> collector current. The base current is just an unfortunate side effect. >>>>>>> The relation between them happens to be rather constant, hence the idea >>>>>>> that hfe is the main factor. Ideally, the base 'leakage' could be so low >>>>>>> that base current electrons can be counted. In that case, would the much >>>>>>> higher collector current come in packets? >>>>>>> >>>>>>> Arie >>>>>> >>>>>> Yup, a BJT is a transconductance device with a loss mechanism >>>>>> (recombination in the base region) that produces leakage current. IIRC >>>>>> Mikko Kiviranta or somebody said that the beta of a BFP650 goes up to >>>>>> above 10000 at low temperature. >>>>>> >>>>>> Cheers >>>>>> >>>>>> Phil Hobbs >>>>> >>>>> A transistor has c-b leakage, Is of the c-b diode, so turns itself on >>>>> with the base open. Spice at least suggests that any amount of added >>>>> base current increases collector current. >>>>> >>>>> That said, I don't understand this: >>>> <snip> >>>> >>>> I went into the control panel and set chgtol and absolute current >>>> tolerance to 1E-18, and it works fine. >>>> >>>> Hopefully JT is smiling indulgently somewhere. ;)
>>> >>> What I don't understand is why the sine wave current source doesn't >>> make a sine wave of current. >>> >> >> Right, but if you hack at the control panel as above, it does. >> >> See <https://electrooptical.net/www/sed/JLpuzzle.png>.
> > I can get the current source to make a sine wave if I skip the initial > operating point solution, uic, with your spice settings, but the > collector current is goofy, a 250 Hz triangle. > > One issue is maybe the roughly negative 1 gigavolt swing on the base.
Nice and well-behaved for me, just tightening up all the tolerances (including some on the compression page of the control panel, which isn't shown on the screen shots). <https://electrooptical.net/www/sed/JLpuzzle2.png> Cheers Phil Hobbs -- Dr Philip C D Hobbs Principal Consultant ElectroOptical Innovations LLC / Hobbs ElectroOptics Optics, Electro-optics, Photonics, Analog Electronics Briarcliff Manor NY 10510 http://electrooptical.net http://hobbs-eo.com
On 5/12/2022 3:19 PM, John Larkin wrote:
> On Thu, 12 May 2022 15:01:06 -0400, Phil Hobbs > <pcdhSpamMeSenseless@electrooptical.net> wrote: > >> John Larkin wrote: >>> On Thu, 12 May 2022 10:43:14 -0400, Phil Hobbs >>> <pcdhSpamMeSenseless@electrooptical.net> wrote: >>> >>>> Arie de Muijnck wrote: >>>>> On 2022-05-12 00:30, John Larkin wrote: >>>>> >>>>>> I conjecture (ie guess) that base current makes collector current down >>>>>> at the single-electron level. 1 pA is just 6 milion electrons per >>>>>> second. >>>>> >>>>> AFAIK, it's not the base current but base voltage that controls the >>>>> collector current. The base current is just an unfortunate side effect. >>>>> The relation between them happens to be rather constant, hence the idea >>>>> that hfe is the main factor. Ideally, the base 'leakage' could be so low >>>>> that base current electrons can be counted. In that case, would the much >>>>> higher collector current come in packets? >>>>> >>>>> Arie >>>> >>>> Yup, a BJT is a transconductance device with a loss mechanism >>>> (recombination in the base region) that produces leakage current. IIRC >>>> Mikko Kiviranta or somebody said that the beta of a BFP650 goes up to >>>> above 10000 at low temperature. >>>> >>>> Cheers >>>> >>>> Phil Hobbs >>> >>> A transistor has c-b leakage, Is of the c-b diode, so turns itself on >>> with the base open. Spice at least suggests that any amount of added >>> base current increases collector current. >>> >>> That said, I don't understand this: >> <snip> >> >> I went into the control panel and set chgtol and absolute current >> tolerance to 1E-18, and it works fine. >> >> Hopefully JT is smiling indulgently somewhere. ;) >> >> Cheers >> >> Phil Hobbs > > What I don't understand is why the sine wave current source doesn't > make a sine wave of current. >
Works great! Version 4 SHEET 1 880 680 WIRE -96 64 -176 64 WIRE 288 80 272 80 WIRE 304 80 288 80 WIRE 416 80 384 80 WIRE -176 128 -176 64 WIRE -96 128 -96 64 WIRE 272 128 272 80 WIRE 416 144 416 80 WIRE 176 176 144 176 WIRE 208 176 176 176 WIRE 144 208 144 176 WIRE -176 224 -176 208 WIRE -96 224 -96 208 WIRE 272 288 272 224 WIRE 416 288 416 224 WIRE 144 320 144 288 FLAG 272 288 0 FLAG 416 288 0 FLAG 144 320 0 FLAG 176 176 B FLAG 288 80 C FLAG -176 224 0 FLAG -96 224 0 SYMBOL npn 208 128 R0 WINDOW 0 83 28 Left 2 WINDOW 3 56 54 Left 2 SYMATTR InstName Q1 SYMATTR Value 2N5550 SYMBOL voltage 416 128 R0 WINDOW 0 49 37 Left 2 WINDOW 3 54 64 Left 2 SYMATTR InstName V1 SYMATTR Value 5 SYMBOL current 144 288 R180 WINDOW 0 54 35 Left 2 WINDOW 3 24 0 Left 2 WINDOW 123 0 0 Left 2 WINDOW 39 0 0 Left 2 SYMATTR InstName I1 SYMATTR Value SINE(0 100f 1) SYMBOL res 400 64 R90 WINDOW 0 -8 51 VBottom 2 WINDOW 3 32 56 VTop 2 SYMATTR InstName R1 SYMATTR Value 1 SYMBOL current -176 208 R180 WINDOW 0 54 35 Left 2 WINDOW 3 24 0 Left 2 WINDOW 123 0 0 Left 2 WINDOW 39 0 0 Left 2 SYMATTR InstName I2 SYMATTR Value SINE(0 100f 1) SYMBOL res -112 112 R0 SYMATTR InstName R2 SYMATTR Value 1g TEXT 56 144 Left 2 !.tran 2 TEXT 528 184 Left 2 !.op abstol 1e-18 TEXT 528 216 Left 2 !.op gmin 1e-18 TEXT 0 56 Left 2 ;Low current NPN test TEXT 32 88 Left 2 ;JL May 12 2022
Piotr  you might look at the hc cmos series. They will operate in
the 1 volt range with the expected lower current. One maker spoke 
of characterizing their devices at one something volts. 
   I experimented with those supply voltages for devices
working in the 100k cps area and all seemed pheasable.

Hul


Piotr Wyderski <bombald@protonmail.com> wrote:
> John Larkin wrote:
> > There is a niche of building oscillators that run at very low supply > > voltages, ballpark 10 mV. I think jfets do pretty good.
> Yes, there are several interesting examples. The lowest voltage I know > of is 20mV. But in this off-time research application related to the > recent CeraCharge purchase I am trying to minimize current consumption, > not voltage. It can stop oscillating at 1.2V, no problem with that. But > if the current could be as low as 20nA, that would be something.
> Best regards, Piotr
On Fri, 13 May 2022 21:45:10 -0500, John S <Sophi.2@invalid.org>
wrote:

>On 5/12/2022 3:19 PM, John Larkin wrote: >> On Thu, 12 May 2022 15:01:06 -0400, Phil Hobbs >> <pcdhSpamMeSenseless@electrooptical.net> wrote: >> >>> John Larkin wrote: >>>> On Thu, 12 May 2022 10:43:14 -0400, Phil Hobbs >>>> <pcdhSpamMeSenseless@electrooptical.net> wrote: >>>> >>>>> Arie de Muijnck wrote: >>>>>> On 2022-05-12 00:30, John Larkin wrote: >>>>>> >>>>>>> I conjecture (ie guess) that base current makes collector current down >>>>>>> at the single-electron level. 1 pA is just 6 milion electrons per >>>>>>> second. >>>>>> >>>>>> AFAIK, it's not the base current but base voltage that controls the >>>>>> collector current. The base current is just an unfortunate side effect. >>>>>> The relation between them happens to be rather constant, hence the idea >>>>>> that hfe is the main factor. Ideally, the base 'leakage' could be so low >>>>>> that base current electrons can be counted. In that case, would the much >>>>>> higher collector current come in packets? >>>>>> >>>>>> Arie >>>>> >>>>> Yup, a BJT is a transconductance device with a loss mechanism >>>>> (recombination in the base region) that produces leakage current. IIRC >>>>> Mikko Kiviranta or somebody said that the beta of a BFP650 goes up to >>>>> above 10000 at low temperature. >>>>> >>>>> Cheers >>>>> >>>>> Phil Hobbs >>>> >>>> A transistor has c-b leakage, Is of the c-b diode, so turns itself on >>>> with the base open. Spice at least suggests that any amount of added >>>> base current increases collector current. >>>> >>>> That said, I don't understand this: >>> <snip> >>> >>> I went into the control panel and set chgtol and absolute current >>> tolerance to 1E-18, and it works fine. >>> >>> Hopefully JT is smiling indulgently somewhere. ;) >>> >>> Cheers >>> >>> Phil Hobbs >> >> What I don't understand is why the sine wave current source doesn't >> make a sine wave of current. >> > > >Works great!
Not really. If yoy disconnect the base, the current source still swings +- 100 mv. That depends on some Spice settings.
> >Version 4 >SHEET 1 880 680 >WIRE -96 64 -176 64 >WIRE 288 80 272 80 >WIRE 304 80 288 80 >WIRE 416 80 384 80 >WIRE -176 128 -176 64 >WIRE -96 128 -96 64 >WIRE 272 128 272 80 >WIRE 416 144 416 80 >WIRE 176 176 144 176 >WIRE 208 176 176 176 >WIRE 144 208 144 176 >WIRE -176 224 -176 208 >WIRE -96 224 -96 208 >WIRE 272 288 272 224 >WIRE 416 288 416 224 >WIRE 144 320 144 288 >FLAG 272 288 0 >FLAG 416 288 0 >FLAG 144 320 0 >FLAG 176 176 B >FLAG 288 80 C >FLAG -176 224 0 >FLAG -96 224 0 >SYMBOL npn 208 128 R0 >WINDOW 0 83 28 Left 2 >WINDOW 3 56 54 Left 2 >SYMATTR InstName Q1 >SYMATTR Value 2N5550 >SYMBOL voltage 416 128 R0 >WINDOW 0 49 37 Left 2 >WINDOW 3 54 64 Left 2 >SYMATTR InstName V1 >SYMATTR Value 5 >SYMBOL current 144 288 R180 >WINDOW 0 54 35 Left 2 >WINDOW 3 24 0 Left 2 >WINDOW 123 0 0 Left 2 >WINDOW 39 0 0 Left 2 >SYMATTR InstName I1 >SYMATTR Value SINE(0 100f 1) >SYMBOL res 400 64 R90 >WINDOW 0 -8 51 VBottom 2 >WINDOW 3 32 56 VTop 2 >SYMATTR InstName R1 >SYMATTR Value 1 >SYMBOL current -176 208 R180 >WINDOW 0 54 35 Left 2 >WINDOW 3 24 0 Left 2 >WINDOW 123 0 0 Left 2 >WINDOW 39 0 0 Left 2 >SYMATTR InstName I2 >SYMATTR Value SINE(0 100f 1) >SYMBOL res -112 112 R0 >SYMATTR InstName R2 >SYMATTR Value 1g >TEXT 56 144 Left 2 !.tran 2 >TEXT 528 184 Left 2 !.op abstol 1e-18 >TEXT 528 216 Left 2 !.op gmin 1e-18 >TEXT 0 56 Left 2 ;Low current NPN test >TEXT 32 88 Left 2 ;JL May 12 2022
-- Anybody can count to one. - Robert Widlar
On 14/05/2022 07:04, Hul Tytus wrote:
> Piotr you might look at the hc cmos series. They will operate in > the 1 volt range with the expected lower current. One maker spoke > of characterizing their devices at one something volts. > I experimented with those supply voltages for devices > working in the 100k cps area and all seemed pheasable. > > Hul >
Yes, I actually experienced HC cmos retaining stored latch states down into tens of millivolts region. However to make any kind of oscillator means passing slowly through a linear region and current consumption will shoot up. To make an oscillator a discrete design with high value series resistors might be better, this draws an average 10nA to make narrow pulses every 8-9 secs... Version 4 SHEET 1 1160 680 WIRE 32 -640 -208 -640 WIRE 336 -640 32 -640 WIRE 864 -640 336 -640 WIRE 336 -592 336 -640 WIRE 32 -544 32 -640 WIRE 864 -464 864 -640 WIRE 336 -432 336 -512 WIRE 576 -432 336 -432 WIRE 336 -368 336 -432 WIRE 32 -320 32 -464 WIRE 272 -320 32 -320 WIRE 576 -304 576 -432 WIRE 32 -240 32 -320 WIRE 336 -192 336 -272 WIRE 576 -144 576 -240 WIRE 576 -144 400 -144 WIRE 576 -80 576 -144 WIRE 32 -16 32 -176 WIRE 336 -16 336 -96 WIRE 336 -16 32 -16 WIRE 864 32 864 -384 WIRE -208 64 -208 -640 WIRE 336 80 336 -16 WIRE 432 80 336 80 WIRE 800 80 512 80 WIRE 336 176 336 80 WIRE -208 288 -208 144 WIRE 336 288 336 256 WIRE 336 288 -208 288 WIRE 576 288 576 0 WIRE 576 288 336 288 WIRE 864 288 864 128 WIRE 864 288 576 288 WIRE -208 320 -208 288 FLAG -208 320 0 SYMBOL voltage -208 48 R0 WINDOW 123 0 0 Left 0 WINDOW 39 0 0 Left 0 SYMATTR InstName V1 SYMATTR Value 1.3 SYMBOL pnp 400 -96 R180 SYMATTR InstName Q1 SYMATTR Value 2N3906 SYMBOL npn 272 -368 R0 SYMATTR InstName Q2 SYMATTR Value 2N3904 SYMBOL res 320 -608 R0 SYMATTR InstName R1 SYMATTR Value 10Meg SYMBOL res 560 -96 R0 SYMATTR InstName R3 SYMATTR Value 100Meg SYMBOL res 16 -560 R0 SYMATTR InstName R4 SYMATTR Value 100Meg SYMBOL cap 16 -240 R0 SYMATTR InstName C1 SYMATTR Value 100n SYMBOL cap 560 -304 R0 SYMATTR InstName C2 SYMATTR Value 100n SYMBOL npn 800 32 R0 SYMATTR InstName Q3 SYMATTR Value 2N3904 SYMBOL res 848 -480 R0 SYMATTR InstName R5 SYMATTR Value 10Meg SYMBOL res 320 160 R0 SYMATTR InstName R6 SYMATTR Value 10Meg SYMBOL res 528 64 R90 WINDOW 0 0 56 VBottom 2 WINDOW 3 32 56 VTop 2 SYMATTR InstName R2 SYMATTR Value 10Meg TEXT -242 360 Left 2 !.tran 100 TEXT 928 336 Left 2 ;EPW SED MAY 2022 TEXT 928 288 Left 2 ;Nano power pulser piglet
Good point for an osicilator. The 10's of millivolts range you mention
is an interesting area.

Hul


piglet <erichpwagner@hotmail.com> wrote:
> On 14/05/2022 07:04, Hul Tytus wrote: > > Piotr you might look at the hc cmos series. They will operate in > > the 1 volt range with the expected lower current. One maker spoke > > of characterizing their devices at one something volts. > > I experimented with those supply voltages for devices > > working in the 100k cps area and all seemed pheasable. > > > > Hul > >
> Yes, I actually experienced HC cmos retaining stored latch states down > into tens of millivolts region. However to make any kind of oscillator > means passing slowly through a linear region and current consumption > will shoot up. To make an oscillator a discrete design with high value > series resistors might be better, this draws an average 10nA to make > narrow pulses every 8-9 secs...
> Version 4 > SHEET 1 1160 680 > WIRE 32 -640 -208 -640 > WIRE 336 -640 32 -640 > WIRE 864 -640 336 -640 > WIRE 336 -592 336 -640 > WIRE 32 -544 32 -640 > WIRE 864 -464 864 -640 > WIRE 336 -432 336 -512 > WIRE 576 -432 336 -432 > WIRE 336 -368 336 -432 > WIRE 32 -320 32 -464 > WIRE 272 -320 32 -320 > WIRE 576 -304 576 -432 > WIRE 32 -240 32 -320 > WIRE 336 -192 336 -272 > WIRE 576 -144 576 -240 > WIRE 576 -144 400 -144 > WIRE 576 -80 576 -144 > WIRE 32 -16 32 -176 > WIRE 336 -16 336 -96 > WIRE 336 -16 32 -16 > WIRE 864 32 864 -384 > WIRE -208 64 -208 -640 > WIRE 336 80 336 -16 > WIRE 432 80 336 80 > WIRE 800 80 512 80 > WIRE 336 176 336 80 > WIRE -208 288 -208 144 > WIRE 336 288 336 256 > WIRE 336 288 -208 288 > WIRE 576 288 576 0 > WIRE 576 288 336 288 > WIRE 864 288 864 128 > WIRE 864 288 576 288 > WIRE -208 320 -208 288 > FLAG -208 320 0 > SYMBOL voltage -208 48 R0 > WINDOW 123 0 0 Left 0 > WINDOW 39 0 0 Left 0 > SYMATTR InstName V1 > SYMATTR Value 1.3 > SYMBOL pnp 400 -96 R180 > SYMATTR InstName Q1 > SYMATTR Value 2N3906 > SYMBOL npn 272 -368 R0 > SYMATTR InstName Q2 > SYMATTR Value 2N3904 > SYMBOL res 320 -608 R0 > SYMATTR InstName R1 > SYMATTR Value 10Meg > SYMBOL res 560 -96 R0 > SYMATTR InstName R3 > SYMATTR Value 100Meg > SYMBOL res 16 -560 R0 > SYMATTR InstName R4 > SYMATTR Value 100Meg > SYMBOL cap 16 -240 R0 > SYMATTR InstName C1 > SYMATTR Value 100n > SYMBOL cap 560 -304 R0 > SYMATTR InstName C2 > SYMATTR Value 100n > SYMBOL npn 800 32 R0 > SYMATTR InstName Q3 > SYMATTR Value 2N3904 > SYMBOL res 848 -480 R0 > SYMATTR InstName R5 > SYMATTR Value 10Meg > SYMBOL res 320 160 R0 > SYMATTR InstName R6 > SYMATTR Value 10Meg > SYMBOL res 528 64 R90 > WINDOW 0 0 56 VBottom 2 > WINDOW 3 32 56 VTop 2 > SYMATTR InstName R2 > SYMATTR Value 10Meg > TEXT -242 360 Left 2 !.tran 100 > TEXT 928 336 Left 2 ;EPW SED MAY 2022 > TEXT 928 288 Left 2 ;Nano power pulser
> piglet
piglet wrote:

> Yes, I actually experienced HC cmos retaining stored latch states down > into tens of millivolts region. However to make any kind of oscillator > means passing slowly through a linear region and current consumption > will shoot up. To make an oscillator a discrete design with high value > series resistors might be better, this draws an average 10nA to make > narrow pulses every 8-9 secs...
Nice, your edges are super sharp. Here is mine, sort of 1us pulses at 14Hz with 30nA average at 3V. The perhaps interesting part is the narrow pulse generator: the pulse duration is limited by the energy stored in C2, as the discharging cycle itself is orders of magnitude longer. With R7 I can specify any reasonable duration and it comes at no additional energy cost, as the energy to be dissipated has already come through R4. On the downside, I got stuck here: no idea how to transform the 100mV V_OUT pulses into the full VDD swing without a fancy 100mV Vth transistor and still keep the average power consumption low. The bias network for a differential amplifier or a common base stage will burn hundreds of times more power than the oscillator. Inductors don't seem to help here. Best regards, Piotr Version 4 SHEET 1 880 680 WIRE -176 -336 -256 -336 WIRE -48 -336 -96 -336 WIRE 0 -336 -48 -336 WIRE 192 -336 80 -336 WIRE 368 -336 192 -336 WIRE 576 -336 368 -336 WIRE -48 -320 -48 -336 WIRE 368 -272 368 -336 WIRE -48 -240 -48 -256 WIRE 192 -224 192 -336 WIRE 576 -192 576 -336 WIRE 368 -176 368 -192 WIRE 528 -176 368 -176 WIRE -256 -160 -256 -336 WIRE 368 -160 368 -176 WIRE 192 -80 192 -144 WIRE 192 -80 144 -80 WIRE 288 -80 192 -80 WIRE 320 -80 288 -80 WIRE 576 -80 576 -96 WIRE 688 -80 576 -80 WIRE -256 -64 -256 -80 WIRE 576 -64 576 -80 WIRE 192 -48 192 -80 WIRE 288 -32 288 -80 WIRE 192 32 192 16 WIRE 368 32 368 -64 WIRE 576 32 576 16 WIRE 288 80 288 48 WIRE 688 160 688 -80 WIRE 688 160 336 160 WIRE 288 192 288 176 WIRE 288 192 144 192 WIRE 288 208 288 192 WIRE 288 304 288 288 FLAG -256 -64 0 FLAG -48 -240 0 FLAG 368 32 0 FLAG 576 32 0 FLAG 192 32 0 FLAG 144 -80 V_C2 FLAG 288 304 0 FLAG 144 192 V_OUT SYMBOL voltage -256 -176 R0 WINDOW 123 0 0 Left 0 WINDOW 39 0 0 Left 0 SYMATTR InstName V1 SYMATTR Value 3v SYMBOL res -16 -320 R270 WINDOW 0 32 56 VTop 2 WINDOW 3 0 56 VBottom 2 SYMATTR InstName R1 SYMATTR Value 1m SYMBOL cap -64 -320 R0 SYMATTR InstName C1 SYMATTR Value 100n SYMBOL res -192 -320 R270 WINDOW 0 32 56 VTop 2 WINDOW 3 0 56 VBottom 2 SYMATTR InstName R2 SYMATTR Value 1m SYMBOL nmos 320 -160 R0 SYMATTR InstName M1 SYMATTR Value BSS123 SYMBOL res 352 -288 R0 SYMATTR InstName R3 SYMATTR Value 47Meg SYMBOL res 176 -240 R0 SYMATTR InstName R4 SYMATTR Value 200Meg SYMBOL pmos 528 -96 M180 SYMATTR InstName M2 SYMATTR Value BSS84 SYMBOL res 560 -80 R0 SYMATTR InstName R5 SYMATTR Value 15Meg SYMBOL cap 176 -48 R0 SYMATTR InstName C2 SYMATTR Value 470p SYMBOL nmos 336 80 M0 SYMATTR InstName M3 SYMATTR Value BSS123 SYMBOL res 272 -48 R0 SYMATTR InstName R6 SYMATTR Value 1m SYMBOL res 272 192 R0 SYMATTR InstName R7 SYMATTR Value 330 TEXT -280 16 Left 2 !.ic V(V_C2)=0 TEXT -290 328 Left 2 !.tran 1
On 5/14/2022 1:03 PM, piglet wrote:
> On 14/05/2022 07:04, Hul Tytus wrote: >> Piotr&nbsp; you might look at the hc cmos series. They will operate in >> the 1 volt range with the expected lower current. One maker spoke >> of characterizing their devices at one something volts. >> &nbsp;&nbsp;&nbsp; I experimented with those supply voltages for devices >> working in the 100k cps area and all seemed pheasable. >> >> Hul >> > > Yes, I actually experienced HC cmos retaining stored latch states down > into tens of millivolts region. However to make any kind of oscillator > means passing slowly through a linear region and current consumption > will shoot up. To make an oscillator a discrete design with high value > series resistors might be better, this draws an average 10nA to make > narrow pulses every 8-9 secs... > > Version 4
[Snip SPICE listing]
> piglet
Keep everything clean while building!
piglet wrote:

> To make an oscillator a discrete design with high value > series resistors might be better, this draws an average 10nA to make > narrow pulses every 8-9 secs...
After some prototyping I can confirm, your UJT-emulating circuit wins hands down. I removed R6, R2, Q3 and R5, changed C1 and C2 to 470p and coupled to the C2 discharge energy via a small transformer, getting beautiful 1us spikes @28Hz. Thank you, Piglet! Best regards, Piotr
On Sat, 14 May 2022 19:03:40 +0100, piglet <erichpwagner@hotmail.com>
wrote:

>On 14/05/2022 07:04, Hul Tytus wrote: >> Piotr you might look at the hc cmos series. They will operate in >> the 1 volt range with the expected lower current. One maker spoke >> of characterizing their devices at one something volts. >> I experimented with those supply voltages for devices >> working in the 100k cps area and all seemed pheasable. >> >> Hul >> > >Yes, I actually experienced HC cmos retaining stored latch states down >into tens of millivolts region. However to make any kind of oscillator >means passing slowly through a linear region and current consumption >will shoot up. To make an oscillator a discrete design with high value >series resistors might be better, this draws an average 10nA to make >narrow pulses every 8-9 secs... >
I want an LED blinker to show that a high-voltage power supply is still dangerous. It should discharge the supply at some low current and blink from, say, 1400 volts down to maybe 40. A variant of your circuit might work. Charge a cap through a string of depletion fets and modify your thing with a zener between emitters. -- If a man will begin with certainties, he shall end with doubts, but if he will be content to begin with doubts he shall end in certainties. Francis Bacon