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JFET used as a diode

Started by Piotr Wyderski June 22, 2018
On Fri, 22 Jun 2018 09:27:05 -0700 (PDT), whit3rd <whit3rd@gmail.com>
wrote:

>On Friday, June 22, 2018 at 9:05:06 AM UTC-7, John Larkin wrote: >> On Fri, 22 Jun 2018 09:02:14 +0200, Piotr Wyderski >> <peter.pan@neverland.mil> wrote: >> >> >I need a low current, low voltage and extremely low leakage diode. > >> Jfets make terrible diodes. Series resistance and capacitance are both >> high. And jfets are expensive. >> >> The c-b junction of a small transistor is a much better diode. BFT25 >> c-b is around 0.35 pF and has leakage that's hard to measure, below 10 >> fA. > >It's not a good part, though, for 20 mA; if you want the c-b diode, with >emitter open, you want something that allows 20 mA base current.
BFT25 must be a tiny chip; it's only good for 30 mW dissipation. Something hunkier would be appropriate for 20 mA, but getting pA leakage is easy. -- John Larkin Highland Technology, Inc picosecond timing precision measurement jlarkin att highlandtechnology dott com http://www.highlandtechnology.com
John Larkin wrote:

> Jfets make terrible diodes. Series resistance and capacitance are both > high.
Capacitance is not important here, but resistance might be, thanks for pointing this out.
> And jfets are expensive.
MMBFJ202 costs 7 cents at quantity 10, 4 cents for a full 3000 reel. Would say it's dirt cheap. I've seen them used in this role on several Tektronics schematics. Why didn't they use a bipolar instead?
> The c-b junction of a small transistor is a much better diode. BFT25 > c-b is around 0.35 pF and has leakage that's hard to measure, below 10 > fA.
So again, how about its reliability? The base region isn't very famous for its rugged physical structure. No long-term degradation? Best regards, Piotr
On Fri, 22 Jun 2018 20:19:41 +0200, Piotr Wyderski
<peter.pan@neverland.mil> wrote:

>John Larkin wrote: > >> Jfets make terrible diodes. Series resistance and capacitance are both >> high. > >Capacitance is not important here, but resistance might be, thanks for >pointing this out. > >> And jfets are expensive. > >MMBFJ202 costs 7 cents at quantity 10, 4 cents for a full 3000 reel. >Would say it's dirt cheap. > >I've seen them used in this role on several Tektronics schematics. >Why didn't they use a bipolar instead? > >> The c-b junction of a small transistor is a much better diode. BFT25 >> c-b is around 0.35 pF and has leakage that's hard to measure, below 10 >> fA. > >So again, how about its reliability? The base region isn't very >famous for its rugged physical structure. No long-term degradation? > > Best regards, Piotr
If you don't need fA leakage, go for something bigger than the BFT25. You can get SOT23 transistors that are good for amps of collector current, which implies a lot of base current. The jfet is OK if you like the forward conduction curve, but you should maybe test it. It will have a biggish ohmic component with a large positive TC. There are low leakage p-n diodes, like CMPD6001. They are typically way better than their specs. -- John Larkin Highland Technology, Inc picosecond timing precision measurement jlarkin att highlandtechnology dott com http://www.highlandtechnology.com
On 06/22/2018 01:00 PM, George Herold wrote:
> On Friday, June 22, 2018 at 11:37:48 AM UTC-4, Piotr Wyderski wrote: >> George Herold wrote: >> >>> What sort of leakage current do you need? >> >> <=100nA for T<=80C >> >>> And how much V_rev. ? >> >> 5V >> >> Best regards, Piotr > > Speed? The bc or be junction of a 2n3904 would probably work. > B. Pease "Bounding an clamping techniques" has a nice discussion of diodes... > I can't find a good copy on the web. :^( > > George H. >
There's this one, but it's a bit blurry. https://electrooptical.net/www/sed/Bob-Pease-on-bounding-and-clamping-techniques.pdf Cheers Phil Hobbs -- Dr Philip C D Hobbs Principal Consultant ElectroOptical Innovations LLC Optics, Electro-optics, Photonics, Analog Electronics 160 North State Road #203 Briarcliff Manor NY 10510 hobbs at electrooptical dot net http://electrooptical.net
George Herold wrote:

> Speed?
None, milliseconds would be fine.
> B. Pease "Bounding an clamping techniques" has a nice discussion of diodes... > I can't find a good copy on the web. :^(
Thanks for the reference, George. Best regards, Piotr
On 22.6.18 17:14, Phil Hobbs wrote:
> On 06/22/2018 04:58 AM, whit3rd wrote: >> On Friday, June 22, 2018 at 12:02:20 AM UTC-7, Piotr Wyderski wrote: >>> I need a low current, low voltage and extremely low leakage diode. >>> The gate junction of MMBFJ202 seems extremely well-suited >> >> Yep, should work fine.&nbsp;&nbsp; The JFETs are tested for leakage current, >> one would hope lots of other diodes are just as good in >> reverse blocking (but would require sorting).&nbsp;&nbsp; Tested >> transistors, with B-C shorted, might do well - and were >> discussed here not long ago. > > Not B-C shorted--it's the base-collector junction that has the low > leakage.&nbsp; You just leave the emitter open.&nbsp; BFT25As are great for that, > but of course won't take 20 mA. >
Since when there has been base and collector in an JFET? -- -TV
On 22.6.18 19:04, John Larkin wrote:
> On Fri, 22 Jun 2018 09:02:14 +0200, Piotr Wyderski > <peter.pan@neverland.mil> wrote: > >> I need a low current, low voltage and extremely low leakage diode. >> The gate junction of MMBFJ202 seems extremely well-suited for the job. >> The datasheet says its absolute maximum gate current is 50mA. >> Can I operate it reliably at 20mA for years? I mean, would there >> be any relevant degradation mechanism or is this junction an ordinary >> diode and I shouldn't worry about it? >> >> Best regards, Piotr > > Jfets make terrible diodes. Series resistance and capacitance are both > high. And jfets are expensive. > > The c-b junction of a small transistor is a much better diode. BFT25 > c-b is around 0.35 pF and has leakage that's hard to measure, below 10 > fA. > > https://www.dropbox.com/s/ft0tsikhdi90rgq/BFT25.JPG?raw=1 > > Most gumdrop bipolars will leak well below 1 pA.
When other options do not work, the PAD-1 seems to be still around. A pair of them performed beautifully in a fA electrometer. -- -TV
On 06/22/2018 03:33 PM, Tauno Voipio wrote:
> On 22.6.18 17:14, Phil Hobbs wrote: >> On 06/22/2018 04:58 AM, whit3rd wrote: >>> On Friday, June 22, 2018 at 12:02:20 AM UTC-7, Piotr Wyderski wrote: >>>> I need a low current, low voltage and extremely low leakage diode. >>>> The gate junction of MMBFJ202 seems extremely well-suited >>> >>> Yep, should work fine.&nbsp;&nbsp; The JFETs are tested for leakage current, >>> one would hope lots of other diodes are just as good in >>> reverse blocking (but would require sorting).&nbsp;&nbsp; Tested >>> transistors, with B-C shorted, might do well - and were >>> discussed here not long ago. >> >> Not B-C shorted--it's the base-collector junction that has the low >> leakage.&nbsp; You just leave the emitter open.&nbsp; BFT25As are great for >> that, but of course won't take 20 mA. >> > > Since when there has been base and collector in an JFET? >
The referent was "tested transistors", i.e. BJTs, not JFETs. If you short the gate of a JFET to drain or source, it stops acting like a diode. Cheers Phil Hobbs -- Dr Philip C D Hobbs Principal Consultant ElectroOptical Innovations LLC Optics, Electro-optics, Photonics, Analog Electronics 160 North State Road #203 Briarcliff Manor NY 10510 hobbs at electrooptical dot net http://electrooptical.net
On Friday, June 22, 2018 at 2:48:45 PM UTC-4, Phil Hobbs wrote:
> On 06/22/2018 01:00 PM, George Herold wrote: > > On Friday, June 22, 2018 at 11:37:48 AM UTC-4, Piotr Wyderski wrote: > >> George Herold wrote: > >> > >>> What sort of leakage current do you need? > >> > >> <=100nA for T<=80C > >> > >>> And how much V_rev. ? > >> > >> 5V > >> > >> Best regards, Piotr > > > > Speed? The bc or be junction of a 2n3904 would probably work. > > B. Pease "Bounding an clamping techniques" has a nice discussion of diodes... > > I can't find a good copy on the web. :^( > > > > George H. > > > There's this one, but it's a bit blurry. > > https://electrooptical.net/www/sed/Bob-Pease-on-bounding-and-clamping-techniques.pdf >
Right I've got the same blurry copy on my computer. I've got an older paper copy some where. George H.
> Cheers > > Phil Hobbs > > -- > Dr Philip C D Hobbs > Principal Consultant > ElectroOptical Innovations LLC > Optics, Electro-optics, Photonics, Analog Electronics > > 160 North State Road #203 > Briarcliff Manor NY 10510 > > hobbs at electrooptical dot net > http://electrooptical.net
On Fri, 22 Jun 2018 22:35:59 +0300, Tauno Voipio
<tauno.voipio@notused.fi.invalid> wrote:

>On 22.6.18 19:04, John Larkin wrote: >> On Fri, 22 Jun 2018 09:02:14 +0200, Piotr Wyderski >> <peter.pan@neverland.mil> wrote: >> >>> I need a low current, low voltage and extremely low leakage diode. >>> The gate junction of MMBFJ202 seems extremely well-suited for the job. >>> The datasheet says its absolute maximum gate current is 50mA. >>> Can I operate it reliably at 20mA for years? I mean, would there >>> be any relevant degradation mechanism or is this junction an ordinary >>> diode and I shouldn't worry about it? >>> >>> Best regards, Piotr >> >> Jfets make terrible diodes. Series resistance and capacitance are both >> high. And jfets are expensive. >> >> The c-b junction of a small transistor is a much better diode. BFT25 >> c-b is around 0.35 pF and has leakage that's hard to measure, below 10 >> fA. >> >> https://www.dropbox.com/s/ft0tsikhdi90rgq/BFT25.JPG?raw=1 >> >> Most gumdrop bipolars will leak well below 1 pA. > > >When other options do not work, the PAD-1 seems to be still around. >A pair of them performed beautifully in a fA electrometer.
Yes, but high Rs, and expensive. -- John Larkin Highland Technology, Inc picosecond timing precision measurement jlarkin att highlandtechnology dott com http://www.highlandtechnology.com